Stable p-type nitrogen-doped zinc oxide films prepared by magnetron sputtering

被引：14

作者：

Chen, J. Y. ^{[1
]}

Zhang, H. T. ^{[2
]}

Chen, Q. ^{[2
]}

Husian, F. ^{[1
]}

Cherng, Jyh-Shiarn ^{[1
,3
]}

机构：

[1] Ming Chi Univ Technol, Dept Mat Engn, 84 Gungjuan Rd, Taipei 24301, Taiwan

[2] Beijing Inst Graph Commun, Lab Plasma Phys & Mat, 25 Xinghua North St, Beijing 102600, Peoples R China

[3] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol & Applicat, 84 Gungjuan Rd, Taipei 24301, Taiwan

来源：

VACUUM | 2020年 / 180卷 / 180期

关键词：

Nitrogen-doped zinc oxide; Stable; P-type films; Reactive sputtering;

D O I：

10.1016/j.vacuum.2020.109576

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

P-type nitrogen-doped zinc oxide (NZO) thin film was prepared on a glass substrate by reactive magnetron sputtering using zinc metal target and O-2/N-2 atmosphere. The structural, electrical and optical properties of the NZO films were investigated by X-ray diffraction, electron microscopy, Hall-effect, and Raman scattering measurements. The electrical properties of the optimized p-type NZO films showed a resistivity of 13.1 Omega-cm and an n-p-n transition of conduction mode with increasing nitrogen flow rate was observed. This transition can be ascribed to the two types of defects, N-O, N substitutes for an O site, and (N-2)(O), N-2 substitutes for an O site, due to nitrogen doping as verified by X-ray photoelectron spectroscopy. This sputtering process was reproducible and effective in producing p-type NZO films, and the produced p-type NZO was stable in a period of 259 days after deposition.

引用

页数：5

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