Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy

被引：99

作者：

Yu, WB ^{[1
]}

Madhukar, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.79.905

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The behavior of energetics, atomically resolved stress, and strain in coherent three-dimensional islands observed in highly strained semiconductor heteroepitaxy is examined for the first time via a molecular dynamics study of a model Ge/Si system. Evidence is found for the common but hitherto unsubstantiated practice of representing the island energy as a sum of surfacelike and bulklike terms, down to rather small islands, but with significantly renormalized coefficients indicating marked modifications of the surface and volume elastic energies commonly employed in continuum descriptions.

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页码：905 / 908

页数：4

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