Analytical modelling of threshold voltage and drain current in short channel fully depleted cylindrical gate MOSFET

被引：0

作者：

Gupta, PS ^{[1
]}

Kranti, A ^{[1
]}

Haldar, S ^{[1
]}

机构：

[1] Univ Delhi, Semicond Devices Res Lab, New Delhi 110021, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present paper atl analytical model of threshold voltage and current voltage characteristics for a fully depleted short channel cylindrical gate MOSFET is developed. The analysis takes into account field dependent mobility, velocity saturation and source and drain resistance. Advantages of cylindrical structure over the conventional structure are also investigated and the results so obtained are in good agreement with experimental data.

引用

页码：475 / 482

页数：8

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