N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

被引：95

作者：

Wienecke, Steven ^{[1
]}

Romanczyk, Brian ^{[1
]}

Guidry, Matthew ^{[1
]}

Li, Haoran ^{[1
]}

Ahmadi, Elaheh ^{[1
]}

Hestroffer, Karine ^{[1
]}

Zheng, Xun ^{[1
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 03期

关键词：

GaN; high-electron-mobility-transistor (HEMT); millimeter (mm) wave; N-Polar; power amplifier; W-band; ELECTRON-MOBILITY TRANSISTORS;

D O I：

10.1109/LED.2017.2653192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is presented. This state-of-the-art power performance is enabled by utilizing the inherent polarization fields of N-Polar GaN in combination with a 47.5-nm in situ GaN cap layer to simultaneously mitigate dispersion and improve access region conductivity. These excellent results build upon past work through the use of optimized device dimensions and a transition from a sapphire to a SiC substrate for reduced self-heating.

引用

页码：359 / 362

页数：4

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