Multiple crossings of Landau levels of two-dimensional fermions in double HgTe quantum wells

被引:6
作者
Gusev, G. M. [1 ]
Olshanetsky, E. B. [2 ]
Hernandez, F. G. G. [1 ]
Raichev, O. E. [3 ]
Mikhailov, N. N. [2 ]
Dvoretsky, S. A. [2 ]
机构
[1] Univ Sao Paulo, Inst Fis, BR-13596017 Sao Paulo, SP, Brazil
[2] Inst Semicond Phys, Novosibirsk 630090, Russia
[3] NAS Ukraine, Inst Semicond Phys, Prospekt Nauki 41, UA-03028 Kiev, Ukraine
基金
巴西圣保罗研究基金会;
关键词
DIRAC FERMIONS; TRANSPORT; MAGNETOSPECTROSCOPY; COLLOQUIUM; GRAPHENE; STATES;
D O I
10.1103/PhysRevB.103.035302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both a gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations.
引用
收藏
页数:8
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