Effect of oxygen on the diffusion of nitrogen implanted in silicon

被引：7

作者：

Mannino, G ^{[1
]}

Privitera, V

Scalese, S

Libertino, S

Napolitani, E

Pichler, P

Cowern, NEB

机构：

[1] CNR, Ist Microelettron & Microsistemi, Sez Catania, I-95121 Catania, Italy

[2] Univ Padua, Ist Nazl Fis Mat, I-35131 Padua, Italy

[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[4] Fraunhofer Inst, Integrated Circuits Device Technol Div, D-91058 Erlangen, Germany

[5] Univ Surrey, Sch Elect Comp & Math, Surrey GU2 7XH, England

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1149/1.1759295

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Nitrogen implants were performed in Si wafers of variable purity, i.e., epitaxial layers, float zone, and Czochralski silicon (CZ-Si). The diffusion behavior of nitrogen reported by Hockett in Appl. Phys. Lett., 54, 1793 (1989), where nitrogen diffuses for several micrometers at temperatures as low as 750degreesC and the profiles assume a "double-peak'' structure, is peculiar of CZ-Si. In contrast, in pure epitaxial-Si, nitrogen is immobile at low temperature but, at a higher temperature (850degreesC), the broadening of the nitrogen profile never assumes the shape observed in CZ-Si. Our results suggest that oxygen determines the shape of the nitrogen diffusion profiles. (C) 2004 The Electrochemical Society.

引用

页码：G161 / G163

页数：3

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