Evolution of periodic structures on InP (100) surface irradiated with femtosecond laser

被引：4
|
作者：
Qian, H. X. [1 ]
Zhou, W. [2 ]
Zheng, H. Y. [3 ]
Zeng, X. R. [1 ]
Sheng, H. C. [1 ]
机构：
[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Engn Lab Adv Technol Ceram, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
[2] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
[3] Singapore Inst Mfg Technol, Singapore 638075, Singapore
来源：
MATERIALS LETTERS | 2014年 / 124卷
基金：
中国国家自然科学基金;
关键词：
Electron microscopy; Laser processing; Surfaces; Semiconductors; INDIUM-PHOSPHIDE; ABLATION; PULSES;
D O I：
10.1016/j.matlet.2014.03.078
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single crystalline InP was irradiated in air with p-polarized Ti:sapphire femtosecond laser at a fixed laser fluence of 274 mJ/cm(2). Ripples parallel to the laser polarization direction were found to form preferentially for small number of laser pulses ranging from 50 to 300 or at positions far from the center of laser spot, whereas grooves with the direction perpendicular to the laser polarization appeared to be superimposed on ripples for larger number of laser pulses or at positions close to the center of laser spot. Results reveal that ripple formation is a precursor for the formation of grooves and pattern evolution is dependent on the laser fluence used. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：235 / 238
页数：4
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