On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

被引：8
作者：
Chen, Tzu-Pin [2 ]
Lee, Chi-Jhung [2 ]
Lour, Wen-Shiung [1 ]
Guo, Der-Feng [3 ]
Tsai, Jung-Hui [4 ]
Liu, Wen-Chau [2 ]
机构：
[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[3] Chinese Air Force Acad, Dept Elect Engn, Kangsun 820, Kaohsiung Cty, Taiwan
[4] Natl Kaohsiung Normal Univ, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 02期
关键词：
Composite collector; Breakdown voltage; Electron impact ionization; DEGRADATION; GAIN;
D O I：
10.1016/j.sse.2008.11.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The breakdown behaviors of InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) are studied and demonstrated. By using a composite collector structure at the base-collector heterojunction, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in our DHBT device. Experimentally, as compared with the studied SHBT, the studied DHBT reveals the enhanced breakdown voltages, lower collector leakage current I-co, and smaller electron impact ionization alpha. Moreover, the temperature-dependent electron impact ionization characteristics and electrical reliability for both devices are also studied. Therefore, the studied DHBT device provides the promise for millimeter-wave and power circuit applications. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：190 / 194
页数：5
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