High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

被引：64

作者：

Marukame, Takao ^{[1
]}

Ishikawa, Takayuki ^{[1
]}

Matsuda, Ken-Ichi ^{[1
]}

Uemura, Tetsuya ^{[1
]}

Yamamoto, Masafumi ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 26期

关键词：

D O I：

10.1063/1.2217166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.

引用

收藏

页数：3

相关论文

共 24 条

[1] Large negative magnetoresi stance effects in Co2Cr0.6Fe0.4Al [J].

Block, T ;

Felser, C ;

Jakob, G ;

Ensling, J ;

Mühling, B ;

Gütlich, P ;

Cava, RJ .

JOURNAL OF SOLID STATE CHEMISTRY, 2003, 176 (02) :646-651

[2] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416 [J].

Butler, WH ;

Zhang, XG ;

Schulthess, TC ;

MacLaren, JM .

PHYSICAL REVIEW B, 2001, 63 (05)

[3] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Djayaprawira, DD ;

Tsunekawa, K ;

Nagai, M ;

Maehara, H ;

Yamagata, S ;

Watanabe, N ;

Yuasa, S ;

Suzuki, Y ;

Ando, K .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[4] Design of magnetic materials:: the electronic structure of the ordered, doped Heusler compound Co2Cr1-xFexAl [J].

Fecher, GH ;

Kandpal, HC ;

Wurmehl, S ;

Morais, J ;

Lin, HJ ;

Elmers, HJ ;

Schönhense, G ;

Felser, C .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (46) :7237-7252

[5]

GROOT RA, 1983, PHYS REV LETT, V50, P2024

[6] Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering [J].

Ikeda, S ;

Hayakawa, J ;

Lee, YM ;

Sasaki, R ;

Meguro, T ;

Matsukura, F ;

Ohno, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49) :L1442-L1445

[7] Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys [J].

Inomata, K ;

Okamura, S ;

Miyazaki, A ;

Kikuchi, M ;

Tezuka, N ;

Wojcik, M ;

Jedryka, E .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (05) :816-823

[8] Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure [J].

Inomata, K ;

Okamura, S ;

Goto, R ;

Tezuka, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B) :L419-L422

[9] SEARCH FOR HALF-METALLIC COMPOUNDS IN CO(2)MNZ (Z=IIIB, IVB, VB ELEMENT) [J].

ISHIDA, S ;

FUJII, S ;

KASHIWAGI, S ;

ASANO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) :2152-2157

[10] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226