High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

被引：64
作者：
Marukame, Takao [1 ]
Ishikawa, Takayuki [1 ]
Matsuda, Ken-Ichi [1 ]
Uemura, Tetsuya [1 ]
Yamamoto, Masafumi [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 26期
关键词：
D O I：
10.1063/1.2217166
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.
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页数：3
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共 24 条
  • [1] Large negative magnetoresi stance effects in Co2Cr0.6Fe0.4Al
    Block, T
    Felser, C
    Jakob, G
    Ensling, J
    Mühling, B
    Gütlich, P
    Cava, RJ
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 2003, 176 (02) : 646 - 651
  • [2] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416
    Butler, WH
    Zhang, XG
    Schulthess, TC
    MacLaren, JM
    [J]. PHYSICAL REVIEW B, 2001, 63 (05)
  • [3] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
    Djayaprawira, DD
    Tsunekawa, K
    Nagai, M
    Maehara, H
    Yamagata, S
    Watanabe, N
    Yuasa, S
    Suzuki, Y
    Ando, K
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
  • [4] Design of magnetic materials:: the electronic structure of the ordered, doped Heusler compound Co2Cr1-xFexAl
    Fecher, GH
    Kandpal, HC
    Wurmehl, S
    Morais, J
    Lin, HJ
    Elmers, HJ
    Schönhense, G
    Felser, C
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (46) : 7237 - 7252
  • [5] GROOT RA, 1983, PHYS REV LETT, V50, P2024
  • [6] Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
    Ikeda, S
    Hayakawa, J
    Lee, YM
    Sasaki, R
    Meguro, T
    Matsukura, F
    Ohno, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49): : L1442 - L1445
  • [7] Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys
    Inomata, K
    Okamura, S
    Miyazaki, A
    Kikuchi, M
    Tezuka, N
    Wojcik, M
    Jedryka, E
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (05) : 816 - 823
  • [8] Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure
    Inomata, K
    Okamura, S
    Goto, R
    Tezuka, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B): : L419 - L422
  • [9] SEARCH FOR HALF-METALLIC COMPOUNDS IN CO(2)MNZ (Z=IIIB, IVB, VB ELEMENT)
    ISHIDA, S
    FUJII, S
    KASHIWAGI, S
    ASANO, S
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) : 2152 - 2157
  • [10] TUNNELING BETWEEN FERROMAGNETIC-FILMS
    JULLIERE, M
    [J]. PHYSICS LETTERS A, 1975, 54 (03) : 225 - 226
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