dye sensitized solar cell;
tin oxide;
gallium doping;
nano-cuboid;
band edge;
charge recombination;
NANOCRYSTALLINE TIO2;
LOW-COST;
SNO2;
PERFORMANCE;
PHOTOANODE;
FILMS;
RECOMBINATION;
FABRICATION;
EFFICIENCY;
ENERGY;
D O I:
10.1021/am403640s
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (similar to 0.74 V), fill factor (similar to 73.7%), and power conversion efficiency (similar to 4.05%).