Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

被引：82

作者：

Chen, Yan ^{[1
,2
]}

Wang, Xudong ^{[1
]}

Wang, Peng ^{[1
]}

Huang, Hai ^{[1
,2
]}

Wu, Guangjian ^{[1
]}

Tian, Bobo ^{[1
,2
]}

Hong, Zhenchen ^{[3
]}

Wang, Yutao ^{[3
]}

Sun, Shuo ^{[1
]}

Shen, Hong ^{[1
]}

Wang, Jianlu ^{[1
]}

Hu, Weida ^{[1
]}

Sun, Jinglan ^{[1
]}

Meng, Xiangjian ^{[1
]}

Chu, Junhao ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China

[3] Univ Sci & Technol China, Dept Phys, Hefei 230000, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 47期

基金：

上海市自然科学基金;

关键词：

MoS2; Ferroelectric relaxor; P(VDF-TrFE-CFE); high-kappa; photodetectors; NONVOLATILE MEMORY TRANSISTOR; HIGH-PERFORMANCE; LARGE-AREA; MOBILITY; GRAPHENE; PHOTOLUMINESCENCE;

D O I：

10.1021/acsami.6b10206

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recently, new devices combining two-dimensional (2D) materials with ferroelectrics, have been a new hotspot for promising applications in electronics and optoelectronics. Here, we design a new type of FET using the 2D MoS2 and poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer ferroelectric relaxor. The devices exhibit excellent performance including a large on/off ratio) and an insignificant leakage current. Moreover, the hysteresis characteristics are effectively modulated for its ferroelectric properties at low temperature. Additionally, a broad range photoresponse (visible to 1.55 mu m) and a high sensitivity (>300 A/W, lambda = 450 nm) are achieved. These results indicate that ferroelectric relaxor can be applied into the high-performance 2D optoelectronic devices.

引用

页码：32083 / 32088

页数：6

共 30 条

[1]

Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]

[2] Photoluminescence from Chemically Exfoliated MoS2 [J].

Eda, Goki ;

Yamaguchi, Hisato ;

Voiry, Damien ;

Fujita, Takeshi ;

Chen, Mingwei ;

Chhowalla, Manish .

NANO LETTERS, 2011, 11 (12) :5111-5116

[3] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[4] Phonon-limited mobility in n-type single-layer MoS2 from first principles [J].

Kaasbjerg, Kristen ;

Thygesen, Kristian S. ;

Jacobsen, Karsten W. .

PHYSICAL REVIEW B, 2012, 85 (11)

[5] Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure [J].

Kobayashi, Takuhei ;

Hori, Naoki ;

Nakajima, Takashi ;

Kawae, Takeshi .

APPLIED PHYSICS LETTERS, 2016, 108 (13)

[6]

Koppens FHL, 2014, NAT NANOTECHNOL, V9, P780, DOI [10.1038/nnano.2014.215, 10.1038/NNANO.2014.215]

[7] Anomalous Lattice Vibrations of Single- and Few-Layer MoS2 [J].

Lee, Changgu ;

Yan, Hugen ;

Brus, Louis E. ;

Heinz, Tony F. ;

Hone, James ;

Ryu, Sunmin .

ACS NANO, 2010, 4 (05) :2695-2700

[8] Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors [J].

Lee, Eungkyu ;

Ko, Jieun ;

Lim, Keon-Hee ;

Kim, Kyongjun ;

Park, Si Yun ;

Myoung, Jae M. ;

Kim, Youn Sang .

ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (29) :4689-4697

[9] MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel [J].

Lee, Hee Sung ;

Min, Sung-Wook ;

Park, Min Kyu ;

Lee, Young Tack ;

Jeon, Pyo Jin ;

Kim, Jae Hoon ;

Ryu, Sunmin ;

Im, Seongil .

SMALL, 2012, 8 (20) :3111-3115

[10] Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition [J].

Lee, Yi-Hsien ;

Zhang, Xin-Quan ;

Zhang, Wenjing ;

Chang, Mu-Tung ;

Lin, Cheng-Te ;

Chang, Kai-Di ;

Yu, Ya-Chu ;

Wang, Jacob Tse-Wei ;

Chang, Chia-Seng ;

Li, Lain-Jong ;

Lin, Tsung-Wu .

ADVANCED MATERIALS, 2012, 24 (17) :2320-2325

← 1 2 3 →