Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction

被引:24
作者
Kim, Junghyun [1 ,2 ,3 ,4 ]
Son, Suhan [1 ,2 ,3 ,4 ]
Coak, Matthew J. [1 ,2 ,3 ,5 ]
Hwang, Inho [1 ,2 ,3 ,4 ]
Lee, Youjin [1 ,2 ,3 ,4 ]
Zhang, Kaixuan [1 ,2 ,3 ,4 ]
Park, Je-Geun [1 ,2 ,3 ,4 ]
机构
[1] Inst for Basic Sci Korea, Ctr Correlated Electron Syst, Seoul 08826, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[3] Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea
[4] Seoul Natl Univ, Ctr Quantum Mat, Seoul 08826, South Korea
[5] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
基金
新加坡国家研究基金会;
关键词
WAALS; FERROMAGNETISM; CRYSTAL;
D O I
10.1063/5.0012305
中图分类号
O59 [应用物理学];
学科分类号
摘要
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo-structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2 (FGT)/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I-V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be similar to 0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance. Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials. Published under license by AIP Publishing.
引用
收藏
页数:6
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