Modeling the Spectral Luminescence Emission of Silicon Solar Cells and Wafers

被引：36

作者：

Schinke, Carsten ^{[1
]}

Hinken, David ^{[1
]}

Schmidt, Jan ^{[1
,2
]}

Bothe, Karsten ^{[1
]}

Brendel, Rolf ^{[1
,2
]}

机构：

[1] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Inst Solid State Phys, Dept Solar Energy, D-30167 Hannover, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2013年 / 3卷 / 03期

关键词：

Charge carrier distribution; luminescence; photon escape probability; RADIATIVE RECOMBINATION; TEMPERATURE-DEPENDENCE; LAW; COEFFICIENT; RECIPROCITY;

D O I：

10.1109/JPHOTOV.2013.2263985

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A generalized expression for the theoretical description of luminescence spectra of silicon solar cells and wafers is outlined. Models of the spectral luminescence emission, which can be found in the literature, are reviewed and compared with spectrally resolved photoluminescence measurements carried out on specially prepared samples. These models describe the spectrum of samples with either two planar or two rough (lambertian reflecting) surfaces. Good qualitative agreement is shown. Moreover, we introduce a new model which is valid for samples with any configuration of planar and textured surfaces and also takes free carrier absorption into account. The accuracy of the model is experimentally confirmed by a comparison to an electroluminescence spectrum of an industrial silicon solar cell.

引用

页码：1038 / 1052

页数：15

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