Design of CMOS Synthetic Transmission-Line-Based X-Band Active Bandstop Filter Using E-Shaped Resonator

This paper presents a monolithic transmission-line-based double-mode active bandstop filter (BSF) fabricated in a standard 0.13-mu m complementary metal-oxide-semiconductor (CMOS) technology. The proposed filter comprises an E-shaped double-mode resonator which is implemented with synthetic quasi-TEM transmission lines. The area of the proposed X-Band active BSF is 510 mu m x 570 mu m, in the dimension of 0.017 lambda(0) x 0.019 lambda(0), where lambda(0) is the free space wavelength at 10 GHz. The measurement results, in good agreement with the simulated ones, demonstrate a rejection level of 22.87 dB at center frequency of 9.32 GHz and bandwidth of 4.5%. The total power consumption of this circuit is 1.09 mW.