Effect of hot carrier stress on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain

For the first time, the effect of hot carrier stress (HCS) on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain (S/D) was studied in detail. After HCS, the extra SiGe S/D mechanical stress deteriorated the hot carrier reliability more by inducing more defects at the interface between the gate oxide and the extension of S/D. However, the SiGe S/D strain did not change the worst HCS condition and the dependence of f(T) degradation. The f(T) is still dominated by g(m) only, even though the C-gs and C-gd have been changed by the SiGe S/D strain.