Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

被引：11

作者：

Izhnin, I. I. ^{[1
]}

Izhnin, A. I. ^{[1
]}

Mynbaev, K. D. ^{[2
]}

Bazhenov, N. L. ^{[2
]}

Shilyaev, A. V. ^{[2
]}

Mikhailov, N. N. ^{[3
]}

Varavin, V. S. ^{[3
]}

Dvoretsky, S. A. ^{[3
]}

Fitsych, O. I. ^{[1
]}

Voitsekhovsky, A. V. ^{[4
]}

机构：

[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[2] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] RAS, AV Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[4] Tomsk State Univ, Tomsk 634050, Russia

来源：

OPTO-ELECTRONICS REVIEW | 2013年 / 21卷 / 04期

关键词：

nanostructures; molecular beam epitaxy; HgCdTe; photoluminescence; OPTICAL-PROPERTIES;

D O I：

10.2478/s11772-013-0103-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.

引用

页码：390 / 394

页数：5

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