Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations

Silicon p-n junction specimens with a range of dopant concentrations have been prepared using focused ion beam milling for examination by off-axis electron holography. Here we show that phenomenon such as the. electrically "inactive" thickness is strongly dependent on the dopant concentration of the specimens. We also show a dependence on both the specimen geometry and intensity of the electron beam on the phases measured across the junctions and a good reproducibility of results if care is taken during examination. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2982415]