The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon

被引：5
作者：
Daly, SE
McGlynn, E
Henry, MO
Campion, JD
McGuigan, KG
doCarmo, MC
Nazare, MH
机构：
[1] ROYAL COLL SURG,DEPT PHYS,DUBLIN 2,IRELAND
[2] UNIV AVEIRO,DEPT FIS,P-3800 AVEIRO,PORTUGAL
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期
关键词：
silicon; oxygen; photoluminescence; group II elements;
D O I：
10.1016/0921-5107(95)01290-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurements show that all the defect spectra are similar and pseudo-donor in nature. The defects are attributed to complexes of oxygen and the Group II impurity.
引用
收藏
页码：116 / 119
页数：4
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