Liquid-Free, Piezoresistive, SOI-Based Pressure Sensor for High Temperature Measurements up to 400 °C

被引:0
作者
Ha-Duong Ngo [1 ]
Mukhopadhyay, Biswaijit [1 ]
Vu Cong Thanh [1 ]
Mackowiak, Peter [1 ]
Schlichting, Volker [1 ]
Obermeier, Ernst [1 ]
Lang, Klaus-Dieter [1 ]
Giuliani, Andrea [2 ]
Drera, Lionello [2 ]
Arancio, Domenico [2 ]
机构
[1] Tech Univ Berlin, Ctr Microperipher Technol, Berlin, Germany
[2] Gefran SpA, Provaglio dIseo Brescia, Brescia, Italy
来源
2012 IEEE SENSORS PROCEEDINGS | 2012年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper a novel liquid-free, piezoresistive pressure sensor on SOI-basis (Silicon On Insulator) for high temperature applications is presented. The sensor is capable of measuring pressures at temperature up to 400 degrees C (constant load) with an accuracy of 0.25 % FSO (Full Scale Output). Media separation is realized using a steel membrane. A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the centerboss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by DRIE (Deep Reactive Ion Etching or Bosch Process). Novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used. Thereby, avoiding chip movement, optimal push rod load transmission is ensured. The housing consists of different sections optimized for compensation of CTE (Coefficient of Thermal Expansion) mismatches. Utilizing this novel packaging scheme and combining different housing materials, temperature, wear, and long term fatigue stability are assured.
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页码:958 / 961
页数:4
相关论文
共 5 条
[1]  
Cibinetto L., 2010, European Patent, Patent No. [EP 1,943,493 B1, 1943493]
[2]  
Friedrichs P., 2012, SILICON CARBIDE POWE, V2
[3]  
Iseni G., 2002, US Patent, Patent No. [US 6,450,038 B1, 6450038]
[4]  
Kurtz A. D., 2004, IMAPS HITEC 2004 SAN
[5]  
Obermeier E., 2008, European Patent, Patent No. [EP 1,662,242 B1, 1662242]