Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength

被引：21

作者：

John Ibanes, Jasher ^{[1
]}

Herminia Balgos, Ma ^{[1
]}

Jaculbia, Rafael ^{[1
]}

Salvador, Arnel ^{[1
]}

Somintac, Armando ^{[1
]}

Estacio, Elmer ^{[1
]}

Que, Christopher T. ^{[2
]}

Tsuzuki, Satoshi ^{[3
]}

Yamamoto, Kohji ^{[3
]}

Tani, Masahiko ^{[3
]}

机构：

[1] Univ Philippines, Natl Inst Phys, Quezon City 1101, Philippines

[2] De La Salle Univ, Dept Phys, Manila 2401, Philippines

[3] Univ Fukui, Res Ctr Dev Far Infrared Reg, Fukui 9108507, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

关键词：

SPECTROSCOPY; ENHANCEMENT; RADIATION; INAS;

D O I：

10.1063/1.4791570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791570]

引用

页数：3

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