A Wide Tuning Range High Output Power 56-74 GHz VCO With On-Chip Transformer Load in SiGe Technology

被引：0

作者：

Nasr, I. ^{[1
]}

Laemmle, B. ^{[1
]}

Knapp, H. ^{[2
]}

Fischer, G. ^{[1
]}

Weigel, R. ^{[1
]}

Kissinger, D. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Elect Engn, Cauerstr 9, D-91058 Erlangen, Germany

[2] Infineon Technol, D-85579 Neubiberg, Germany

来源：

2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2012年

关键词：

VCO; Transformer; Frequency Dividers; Colpitts; FMCW;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an f(t)/f(max) of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of approximate to 27%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase noise of -95 dBc/Hz, which stays below -88 dBc/Hz over the entire tuning range. On-chip frequency dividers were used to enable easier measurement. A single transformer was designed and used simultaneously for output matching of the VCO and as an output balun. The overall chip draws 112 mA from a 3.3 V supply, where the VCO draws 45 mA of the total current.

引用

页码：49 / 52

页数：4

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