A Wide Tuning Range High Output Power 56-74 GHz VCO With On-Chip Transformer Load in SiGe Technology

被引：0

作者：

Nasr, I. ^{[1
]}

Laemmle, B. ^{[1
]}

Knapp, H. ^{[2
]}

Fischer, G. ^{[1
]}

Weigel, R. ^{[1
]}

Kissinger, D. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Elect Engn, Cauerstr 9, D-91058 Erlangen, Germany

[2] Infineon Technol, D-85579 Neubiberg, Germany

来源：

2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2012年

关键词：

VCO; Transformer; Frequency Dividers; Colpitts; FMCW;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an f(t)/f(max) of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of approximate to 27%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase noise of -95 dBc/Hz, which stays below -88 dBc/Hz over the entire tuning range. On-chip frequency dividers were used to enable easier measurement. A single transformer was designed and used simultaneously for output matching of the VCO and as an output balun. The overall chip draws 112 mA from a 3.3 V supply, where the VCO draws 45 mA of the total current.

引用

页码：49 / 52

页数：4

共 50 条

[21] A 253-280 GHz Wide Tuning Range VCO with-3.5 dBm Peak Output Power in 40-nm CMOS
Nath, Surajit Kumar
Yoo, Junghwan
Rieh, Jae-Sung
Yoon, Daekeun
ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2021, : 299 - 302
[22] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
李竹
王志功
李智群
李芹
刘法恩
Journal of Semiconductors, 2014, (12) : 137 - 142
[23] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
Li Zhu
Wang Zhigong
Li Zhiqun
Li Qin
Liu Faen
JOURNAL OF SEMICONDUCTORS, 2014, 35 (12)
[24] IC design of low power, wide tuning range VCO in 90 nm CMOS technology
李竹
王志功
李智群
李芹
刘法恩
Journal of Semiconductors, 2014, 35 (12) : 137 - 142
[25] A variable inductor using mutual-current control and application to a SiGe 4.5-GHz VCO for wide tuning range
Nakamura, Takahiro
Masuda, Toru
Kodama, Akihiro
Washio, Katsuyoshi
2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 840 - 843
[26] A 0.7 V 6.66-9.36 GHz wide tuning range CMOS LC VCO with small chip size
Chen, Jun-Da
Zhang, Jie
INTERNATIONAL JOURNAL OF ELECTRONICS, 2017, 104 (10) : 1763 - 1776
[27] A 5GHz Wide Tuning Range LC-VCO in Sub-micrometer CMOS Technology
Doldan Lorenzo, R.
Gines Arteaga, A. J.
Rueda, A.
Peralias, E.
2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4, 2008, : 558 - 561
[28] A Wide Tuning Range 69 GHz Push-Push VCO Using 0.18 μm CMOS Technology
Chiu, Hsien-Chin
Kao, Chih-Pin
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (02) : 97 - 99
[29] A 2.45GHz wide tuning range VCO using MOS varactor in 0.35 μm SiGeBiCMOS technology
Feng, H
Wu, Q
Guan, X
Zhan, R
Wang, A
IEEE 2005 INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION AND EMC TECHNOLOGIES FOR WIRELESS COMMUNICATIONS PROCEEDINGS, VOLS 1 AND 2, 2005, : P10 - P13
[30] A 2.2GHz High-Swing Class-C VCO with Wide Tuning Range
Ataei, Fatemeh
Yavari, Mohammad
2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2011,

← 1 2 3 4 5 →