The effects of cell sizes, environmental conditions, and growth phases on the strength of individual W303 yeast cells inside ESEM

被引:59
作者
Ahmad, Mohd Ridzuan [1 ]
Nakajima, Masahiro [1 ]
Kojima, Seiji [2 ]
Homma, Michio [2 ]
Fukuda, Toshio [1 ]
机构
[1] Nagoya Univ, Dept MicroNano Syst Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Sci, Dept Biol Sci, Nagoya, Aichi 4648602, Japan
关键词
cell mechanics; environmental-scanning electron microscope (SEM); nanomanipulation; single-cell analysis; yeast cells;
D O I
10.1109/TNB.2008.2002281
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
We performed in situ measurements of mechanical properties of individual W303 wild-type yeast cells by using an integrated environmental scanning electron microscope (ESEM)-nanomanipulator system. Compression experiments to penetrate the cell walls of single cells of different cell sizes (about 3-6 mu m diameter), environmental conditions (600 Pa and 3 mPa), and growth phases (early log, mid log, late log and saturation) were conducted. The compression experiments were performed inside ESEM, embedded with a 7 DOF nanomanipulator with a sharp pyramidal end effector and a cooling stage, i.e., a temperature controller. ESEM itself can control the chamber pressure. Data clearly show an increment in penetration force, i.e., 96 +/- 2, 124 +/- 10, 163 +/- 1, and 234 +/- 14 nN at 3, 4, 5, and 6 mu m cell diameters, respectively. Whereas, 20-fold increase in penetration forces was recorded at different environmental conditions for 5 mu m cell diameter, i.e., 163 +/- 1 nN and 2.95 +/- 0.23 mu N at 600 Pa (ESEM mode) and 3 mPa (HV mode), respectively. This was further confirmed from quantitative estimation of average cell rigidity through the Hertz model, i.e., ESEM mode (3.31 +/- 0.11 MPa) and HV mode (26.02 +/- 3.66 MPa) for 5 mu m cell diameter. Finally, the penetration forces at different cell growth phases also show the increment pattern from log (early, mid, and late) to saturation phases, i.e., 161 +/- 25, 216 +/- 15, 255 +/- 21, and 408 +/- 41 nN, respectively.
引用
收藏
页码:185 / 193
页数:9
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