Effects of a Load Resistor on Conducting Filament Characteristics and Unipolar Resistive Switching Behaviors in a Pt/NiO/Pt Structure

被引：17

作者：

Hwang, Inrok ^{[1
]}

Lee, Myung-Jae ^{[2
]}

Bae, Jieun ^{[1
]}

Hong, Sahwan ^{[1
]}

Kim, Jin-Soo ^{[1
]}

Choi, Jinsik ^{[1
]}

Deng, Xiao Long ^{[1
]}

Ahn, Seung-Eon ^{[2
]}

Kang, Sung-Oong ^{[3
]}

Park, Bae Ho ^{[1
]}

机构：

[1] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 143701, South Korea

[2] Samsung Adv Inst Technol, Suwon 440600, South Korea

[3] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainable Energies, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 06期

关键词：

Conducting filament (CF); load resistor; nonvolatile memory; resistive random-access memory (ReRAM); HIGH-DENSITY;

D O I：

10.1109/LED.2012.2190259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With a simply modified circuit design connecting a Pt/NiO/Pt capacitor to a serial load resistor (R-L), resistive switching (RS) characteristics are significantly improved. Distributions of current at low-resistance state and switching voltages during reset and set processes are much reduced, and RS endurance is much enhanced. Using percolation theory, we find that a multiply connected conducting filament (CF) is preferentially formed in a Pt/NiO/Pt capacitor serially connected to an R-L of 1 k Omega. The multiply connected CF may provide uniform heat distribution to a Pt/NiO/Pt capacitor, resulting in reduced randomness during heat-assisted reset process and improved RS characteristics.

引用

页码：881 / 883

页数：3

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