Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

被引：89

作者：

Zhang, Yuhao ^{[1
]}

Sun, Min ^{[1
]}

Joglekar, Sameer J. ^{[1
]}

Fujishima, Tatsuya ^{[1
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

PLASMA TREATMENT; ALGAN/GAN; OPERATION;

D O I：

10.1063/1.4815923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper demonstrates the compensation of the intrinsic positive charges in Al2O3 gate dielectric by fluorine ions in GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Negatively-charged fluorine ions diffused into the oxide from the AlGaN barrier during the 250 degrees C atomic layer deposition compensate the intrinsic positive charge present in the Al2O3. This compensation is key to control the threshold voltage (V-th) of enhancement-mode (E-mode) transistors. A comprehensive analytical model for the V-th of fluorinated MOS-HEMTs was established and verified by experimental data. This model allows the calculation of the different charge components in order to optimize the transistor structure for E-mode operation. Using the proposed charge compensation, the Vth increases with gate dielectric thickness, exceeding 3.5V for gate dielectrics 25 nm thick. (C) 2013 AIP Publishing LLC.

引用

页数：5

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