Analysis of the charge transfer of models for electrostatic discharge (ESD) and semiconductor devices

被引:15
作者
Greason, WD
机构
[1] Department of Electrical Engineering, Faculty of Engineering Science, University of Western Ontario, London
关键词
D O I
10.1109/28.502188
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various models are used to simulate the electrostatic discharge (ESD) event associated with semiconductor devices; these include the human body model (HBM), the charged device model (CDM), and the field induced charged device model (FCDM). Maxwell's method is used to analyze these models to determine device potentials and the transfer of charge during typical discharges; existing test methods are also examined, A charge injection test method is introduced which provides control of the charge transferred to the device under test; it is proposed as a means to study charge related phenomena due to ESD.
引用
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页码:726 / 734
页数:9
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