Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators

被引：46

作者：

Bao, Lihong ^{[1
,2
,3
]}

Wang, Weiyi ^{[1
,2
]}

Meyer, Nicholas ^{[3
]}

Liu, Yanwen ^{[1
,2
]}

Zhang, Cheng ^{[1
,2
]}

Wang, Kai ^{[1
,2
,3
]}

Ai, Ping ^{[1
,2
]}

Xiu, Faxian ^{[1
,2
]}

机构：

[1] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[3] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50010 USA

来源：

SCIENTIFIC REPORTS | 2013年 / 3卷

基金：

美国国家科学基金会;

关键词：

WEAK ANTILOCALIZATION; DIRAC-FERMION; SURFACE; BI2SE3;

D O I：

10.1038/srep02391

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Revelation of emerging exotic states of topological insulators (TIs) for future quantum computing applications relies on breaking time-reversal symmetry and opening a surface energy gap. Here, we report on the transport response of Bi2Te3 TI thin films in the presence of varying Cr dopants. By tracking the magnetoconductance (MC) in a low doping regime we observed a progressive crossover from weak antilocalization (WAL) to weak localization (WL) as the Cr concentration increases. In a high doping regime, however, increasing Cr concentration yields a monotonically enhanced anomalous Hall effect (AHE) accompanied by an increasing carrier density. Our results demonstrate a possibility of manipulating bulk ferromagnetism and quantum transport in magnetic TI, thus providing an alternative way for experimentally realizing exotic quantum states required by spintronic applications.

引用

页数：6

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