Kinetic Monte Carlo simulation of heterometal epitaxial deposition

被引:18
作者
Yang, YG [1 ]
Johnson, RA [1 ]
Wadley, HNG [1 ]
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22903 USA
关键词
Monte Carlo simulations; construction and use of effective interatomic interactions; surface diffusion; surface roughening; metallic films; copper; nickel;
D O I
10.1016/S0039-6028(01)01767-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vapor deposited multilayers consisting of alternating ferromagnetic and nonferrous metals are being used for magnetic sensing and data storage devices. Their performance is dependent upon interface morphology which is a sensitive function of deposition condition such as the deposition rate., deposition temperature, and flux angle of incidence. A two-dimensional kinetic Monte Carlo method has been developed and used to explore these effects during the growth of model Ni/Cu/Ni multilayers under low adatom impact energy conditions where thermal diffusion is the only mechanism of atomic assembly. An embedded atom method potential with a two-body cross-potential was used for calculation of the activation energies. It takes into account both the atomic configuration of neighboring atoms and their species. Using an extended set of activation barriers the simulations demonstrate that the interface roughness increases almost linearly with increasing layer thickness during the growth, and is more pronounced when depositing a nickel layer than when depositing a copper layer. The deposition of copper is found to help smooth nickel layers. The simulations demonstrate the existence of an optimal growth window in deposition rate-temperature space where the interfacial roughness of a Ni/Cu/Ni multilayer could be minimized. By analyzing the details of individual atomic jumps, the cause of the surface instability is revealed to be the activation and rapid increase of reverse Schwoebel jumps above a temperature threshold. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:141 / 151
页数:11
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