60 GHz Millimeter-Wave CMOS Integrated On-Chip Open Loop Resonator Bandpass Filters on Patterned Ground Shields

This paper presents the design of a second-order and a fourth-order bandpass filter (BPF) for 60 GHz millimeter-wave applications in 0.18 mu m CMOS technology. The proposed on-chip BPFs employ the folded open loop structure designed on pattern ground shields. The adoption of a folded structure and utilization of multiple transmission zeros in the stopband permit the compact size and high selectivity for the BPF. Moreover, the pattern ground shields obviously slow down the guided waves which enable further reduction in the physical length of the resonator, and this, in turn, results in improvement of the insertion losses. A very good agreement between the electromagnetic (EM) simulations and measurement results has been achieved. As a result, the second-order BPF has the center frequency of 57.5 GHz, insertion loss of 2.77 dB, bandwidth of 14 GHz, return loss less than 27.5 dB and chip size of 650 mu m x 810 mu m (including bonding pads) while the fourth-order BPF has the center frequency of 57 GHz, insertion loss of 3.06 dB, bandwidth of 12 GHz, return loss less than 30 dB with chip size of 905 mu m x 810 mu m (including bonding pads).