Highly Sensitive NH3 Detection Based on Organic Field-Effect Transistors with Tris(pentafluorophenyl)borane as Receptor

被引：132

作者：

Huang, Weiguo ^{[1
]}

Besar, Kalpana ^{[1
]}

LeCover, Rachel ^{[1
]}

Rule, Ana Maria ^{[2
]}

Breysse, Patrick N. ^{[2
]}

Katz, Howard E. ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

[2] Johns Hopkins Univ, Dept Environm Hlth Sci, Bloomberg Sch Publ Hlth, Baltimore, MD 21205 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 36期

关键词：

GAS SENSORS; SELECTIVE DETECTION; LEWIS-ACID; DERIVATIVES; IMPROVEMENT; MECHANISM; COBALT; AMINE;

D O I：

10.1021/ja305287p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have increased organic field-effect transistor (OFET) NH3 response using tris-(pentafluorophenyl)borane (TPFB) as a receptor. OFETs with this additive could detect concentrations of 450 ppb v/v, with a limit of detection of 350 ppb, the highest sensitivity reported to date for semiconductor films; in comparison, when triphenylmethane (TPM) or triphenylborane (TFB) was used as an additive, no obvious improvement in the sensitivity was observed. These OFETs also showed considerable selectivity with respect to common organic vapors and stability toward storage. Furthermore, excellent memory of exposure was achieved by keeping the exposed devices in a sealed container stored at -30 degrees C, the first such capability demonstrated with OFETs.

引用

页码：14650 / 14653

页数：4

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