One-dimensional defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method

被引:1
作者
Domagala, J. Z. [1 ]
Paszkowicz, W. [1 ]
Bak-Misiuk, J. [1 ]
Ermakova, O. N. [1 ,2 ]
Dabkowska, H. [3 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Russian Acad Sci, Inst Solid State Chem, Ural Branch 91, Ekaterinburg 620990, Russia
[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada
关键词
Orthovanadate; X-ray diffraction; Defect structure; Defect distribution; Rocking curve; Mapping; X-RAY-DIFFRACTION; RESOLUTION; YVO4; LAYERS; STRAIN; DIFFRACTOMETER; DEFORMATION; TOPOGRAPHY; GADOLINIUM; HEAT;
D O I
10.1016/j.radphyschem.2013.06.027
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Spatially resolved X-ray diffraction techniques provide useful quantitative information on the defect structure distribution for single crystals, thin films or nanowires. In this study, high-resolution X-ray diffraction is used at a laboratory X-ray source, to study the defect structure of undoped and Yb doped needle-shaped PrVO4 crystals grown by the slow cooling method, and to observe the effect of Yb doping on crystal structure and quality. General information on the defect structure is derived from reciprocal lattice-point maps at several selected points. Details of the defect structure are obtained with the use of mapping of triple axis rocking curves and of 2 theta/omega diffraction curves. Combining these techniques provided useful information on the variation of defect nature and distribution along the crystals. There is no particular difference between the undoped and doped crystals. They are typically single crystalline, some of them are built from several blocks with misorientation angles up to several hundred arcsec. The full width at half maximum (FWHM) at the central part of the crystals is as low as about 10-12 arcsec. There is a tendency of FWHM to increase close to the crystal tips, demonstrating that the crystals are of lower crystalline quality at these regions. The mappings performed for (100) and (010) faces show that one of faces exhibits a small curvature (the lattice tilt being smaller than 2 arcsec/mm), whereas the other is characterized by a larger curvature (the tilt by at least three times larger). Unexpectedly, the reciprocal lattice-point maps for (100) and (010) crystal faces include an additional reciprocal lattice point of weak intensity. Its possible origin is discussed. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:174 / 183
页数:10
相关论文
共 60 条
[11]   GROWTH-STUDIES OF YVO4 CRYSTALS-(II) - CHANGES IN Y-V-O-STOICHIOMETRY [J].
ERDEI, S ;
JOHNSON, GG ;
AINGER, FW .
CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (06) :815-828
[12]   III-nitride crystal growth from nitride-salt solution [J].
Feigelson, B. N. ;
Frazier, R. M. ;
Twigg, M. .
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :399-402
[13]   Study of residual strains in wafer crystals by means of lattice tilt mapping [J].
Ferrari, C ;
Korytar, D ;
Kumar, J .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4) :165-173
[14]  
Fewster P.F., 2010, Springer Handbook of Crystal Growth, P1405
[15]   COMBINING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY AND TOPOGRAPHY [J].
FEWSTER, PF .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1991, 24 :178-183
[16]   A HIGH-RESOLUTION MULTIPLE-CRYSTAL MULTIPLE-REFLECTION DIFFRACTOMETER [J].
FEWSTER, PF .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1989, 22 :64-69
[17]   Comparative study of optical and scintillation properties of YVO4, (Lu0.5Y0.5)VO4, and LuVO4 single crystals [J].
Fujimoto, Yutaka ;
Yanagida, Takayuki ;
Yokota, Yuui ;
Chani, Valery ;
Kochurikhin, Vladimir V. ;
Yoshikawa, Akira .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 635 (01) :53-56
[18]   A NEW APPROACH FOR MAPPING X-RAY ROCKING CURVES [J].
GAO, D ;
DAVIS, TJ ;
WILKINS, SW ;
POGANY, AP .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (07) :1831-1834
[19]   MEASUREMENT OF RADII OF CURVATURE OF SLIGHTLY BENT CRYSTALS USING A ONE-DIMENSIONAL DETECTOR [J].
GAO, DC ;
WILKINS, SW ;
STEVENSON, AW ;
POGANY, AP .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (09) :2561-2565
[20]   Reciprocal space mapping for semiconductor substrates and device heterostructures [J].
Goorsky, MS ;
Matney, KM ;
Meshkinpour, M ;
Streit, DC ;
Block, TR .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4) :257-266