Effect of Substrate Temperature on the Optoelectronic Properties of Si-C-N:H Films

被引：0

作者：

Kozak, A. O. ^{[1
]}

Ivaschenko, V. I. ^{[1
]}

Porada, O. K. ^{[1
]}

Ivashchenko, L. A. ^{[1
]}

机构：

[1] NAS Ukraine, Inst Problems Mat Sci, Dept Phys Mat Sci Rrefractory Cpds, Kiev, Ukraine

来源：

PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2017年

关键词：

Si-C-N films; PECVD; hexamethyldisilazane; substrate temperature; refractive index; absorption coefficient; optical band gap; SILICON CARBONITRIDE FILMS; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; OPTICAL-CONSTANTS; THICKNESS; COATINGS; HARDNESS; SPECTRA; PECVD;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si-C-N thin films were deposited on glass and silicon substrates by plasma-enhanced chemical vapor deposition using hexamethyldisilazane as the main precursor. The optoelectronic properties of the films deposited at different substrate temperature were studied. All the deposited films were X-ray amorphous. The distribution of main chemical bonds Si-C, C-N were almost unchanged but the number of Si-N, C-H, Si-H and N-H bonds decreasedessentially. As a result of such a bond redistribution, the transparency, optical energy gap, nanohardness and elastic modulus of the films decreased.

引用

页数：5

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