Degradation of AlGaN-based metal-semiconductor-metal photodetectors

被引：10

作者：

Brendel, M. ^{[1
]}

Hagedorn, S. ^{[1
]}

Brunner, F. ^{[1
]}

Reiner, M. ^{[1
]}

Zeimer, U. ^{[1
]}

Weyers, M. ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

GAN; ULTRAVIOLET; DETECTORS; ALN;

D O I：

10.7567/1347-4065/ab1128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The degradation of AlGaN-based metal-semiconductor-metal photodetectors under UV illumination has been studied. Oxidation triggered by the presence of moisture and mobile carriers at the semiconductor surface was found to be the degradation mechanism. UVC devices with Al0.5Ga0.5N absorbers show stable performance for more than 1000 h at intensities around 10 mW cm(-2) and low dark current when passivated after metallization by SiNx. UVB devices with Al0.25Ga0.75N absorber layers were found to be more sensitive and here additional protection by a thin SiN layer grown in situ in the MOVPE growth chamber against any contamination yielded stable devices. As a result now stable UVB and UVC detectors with high external quantum efficiency, low dark current and no indications for persistent photocurrent are available. (C) 2019 The Japan Society of Applied Physics

引用

页数：7

共 37 条

[1] AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D [J].