Crystallographic effect on subsurface damage formation in silicon microcutting

被引：131

作者：

Yan, Jiwang ^{[1
]}

Asami, Tooru ^{[2
]}

Harada, Hirofumi ^{[3
]}

Kuriyagawa, Tsunemoto ^{[2
]}

机构：

[1] Keio Univ, Dept Mech Engn, Yokohama, Kanagawa 223, Japan

[2] Tohoku Univ, Dept Mech Syst & Design, Sendai, Miyagi 980, Japan

[3] Natl Inst Mat Sci, Nanoelect Mat Unit, Tsukuba, Ibaraki, Japan

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2012年 / 61卷 / 01期

关键词：

Cutting; Single crystal; Surface integrity;

D O I：

10.1016/j.cirp.2012.03.070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanoprecision plunge cutting tests were carried out on single-crystal silicon (0 0 1) samples along various directions at different tool rake angles, and subsurface damage was characterized by cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy. It was found that amorphization. poly-crystallization, dislocation and internal microcracking occurred and these material responses depended strongly on the cutting direction. When cutting in the [1 (1) over bar 0] and [0 (1) over bar 0] directions, deep line defects consisting of microcracks and dislocation groups occurred even when the surface was "ductile"-cut; while for the [128 (309) over bar 0] direction, the damage depth was reduced by a factor of five. (C) 2012 CIRP.

引用

页码：131 / 134

页数：4

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