Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks

被引：7

作者：

Kim, Su Jin ^{[1
]}

Kim, Kyeong Heon ^{[1
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

EXTRACTION; FILM; ENHANCEMENT; BLUE;

D O I：

10.1364/OE.21.008062

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, reduced forward voltage and improved light output power of GaN-based vertical light-emitting diodes (VLEDs) incorporating single-walled carbon nanotube (SWNT)-networks is reported. The SWNT-networks were directly formed on a roughened (textured) n-GaN surface via a solution-processed dip-coating method. The surface-roughened VLEDs with the proposed SWNT-networks had a forward voltage of 3.84 V at 350 mA, lower than that of the surface-roughened VLEDs, and exhibited an increase in light output power by 12.9% at 350 mA compared to the surface-roughened VLEDs. These improved electrical and optical properties could be attributed to the SWNT-networks put on the roughened n-GaN surface, which increase the lateral current transport and create scattering of light through the formation of additional roughness. (c) 2013 Optical Society of America

引用

页码：8062 / 8068

页数：7

共 26 条

[1] Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures [J].

An, Ho-Myoung ;

Sim, Jae In ;

Shin, Ki Seob ;

Sung, Yun Mo ;

Kim, Tae Geun .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (07) :891-896

[2] Quasi-Langmuir-Blodgett thin film deposition of carbon nanotubes [J].

Armitage, NP ;

Gabriel, JCP ;

Grüner, G .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) :3228-3230

[3] Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes [J].

Blatt, Sabine ;

Hennrich, Frank ;

von Loehneysen, Hilbert ;

Kappes, Manfred M. ;

Vijayaraghavan, Aravind ;

Krupke, Ralph .

NANO LETTERS, 2007, 7 (07) :1960-1966

[4] Surface chemical and electronic properties of plasma-treated n-type Al0.5Ga0.5N [J].

Cao, X. A. ;

Piao, H. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (10) :3410-3416

[5] Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes [J].

Cho, Hyun Kyong ;

Jang, Junho ;

Choi, Jeong-Hyeon ;

Choi, Jaewan ;

Kim, Jongwook ;

Lee, Jeong Soo ;

Lee, Beomseok ;

Choe, Young Ho ;

Lee, Ki-Dong ;

Kim, Sang Hoon ;

Lee, Kwyro ;

Kim, Sun-Kyung ;

Lee, Yong-Hee .

OPTICS EXPRESS, 2006, 14 (19) :8654-8660

[6] High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application [J].

Chu, Chen-Fu ;

Cheng, Chao-Chen ;

Liu, Wen-Huan ;

Chu, Jiunn-Yi ;

Fan, Feng-Hsu ;

Cheng, Hao-Chun ;

Doan, Trung ;

Tran, Chuong Anh .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1197-1207

[7] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[8] Carbon-nanotube film on plastic as transparent electrode for resistive touch screens [J].

Hecht, David S. ;

Thomas, David ;

Hu, Liangbing ;

Ladous, Corinne ;

Lam, Tom ;

Park, Youngbae ;

Irvin, Glen ;

Drzaic, Paul .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2009, 17 (11) :941-946

[9] GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography [J].

Horng, RH ;

Yang, CC ;

Wu, JY ;

Huang, SH ;

Lee, CE ;

Wuu, DS .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[10] Percolation in transparent and conducting carbon nanotube networks [J].

Hu, L ;

Hecht, DS ;

Grüner, G .

NANO LETTERS, 2004, 4 (12) :2513-2517

← 1 2 3 →