Hydrogen passivation of germanium (100) surface using wet chemical preparation

被引：136

作者：

Rivillon, S ^{[1
]}

Chabal, YJ

Amy, F

Kahn, A

机构：

[1] Rutgers State Univ, Dept Chem & Biol Chem, Piscataway, NJ 08854 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2142084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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