Electron subbands in a double quantum well in a quantizing magnetic field

被引:27
作者
Dolgopolov, VT [1 ]
Shashkin, AA
Deviatov, EV
Hastreiter, F
Hartung, M
Wixforth, A
Campman, KL
Gossard, AC
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[2] Univ Munich, D-80539 Munich, Germany
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[4] Univ Calif Santa Barbara, Ctr Quantized Elect Struct, Santa Barbara, CA 93106 USA
关键词
D O I
10.1103/PhysRevB.59.13235
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We employ magnetocapacitance and far-infrared spectroscopy techniques to study the spectrum of the double-layer electron system in a parabolic quantum well with a narrow tunnel barrier in the center. For gate-bias-controlled asymmetric electron density distributions in this soft two-subband system we observe both individual subband gaps and double-layer gaps at integer filling factor v. The bilayer gaps are shown to be either trivially common for two subbands or caused by the wavefunction reconstruction in growth direction as induced by intersubband electron transfer at a normal to the interface magnetic field. In the latter case the observed gaps at v = 1 and v = 2 are described within a simple model for the modified bilayer spectrum. [S0163-1829(99)11319-5].
引用
收藏
页码:13235 / 13241
页数:7
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