EUV chemically amplified resist component distribution and efficiency for stochastic defect control

被引:2
作者
Goldfarb, Dario L. [1 ]
Wang, Olivia [2 ]
Thomas, Conor R. [2 ]
Polgrean, Heather [2 ]
Lawson, Margaret C. [1 ]
Hess, Alexander E. [3 ]
De Silva, Anuja [4 ]
机构
[1] IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA
[2] IBM Syst, 2070 Route 52, Hopewell Jct, NY 12533 USA
[3] IBM Almaden Res Ctr, 650 Harry Rd, San Jose, CA 95120 USA
[4] IBM Res Albany Nanotech, 257 Fuller Rd, Albany, NY 12203 USA
来源
ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXVII | 2020年 / 11326卷
关键词
EUV stochastics; material distribution uniformity; resist-hardmask interactions; Dill C parameter; photodecomposable base quencher; PDB; post-develop EUV resist residue; vertical concentration profile; ACID GENERATION; PHOTORESIST;
D O I
10.1117/12.2551967
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we connected the analytical determination of the EUV Dill C parameter for different photodecomposable base quencher (PDB) architectures using a standard addition method, the influence of the underlying hardmask on postdevelop EUV resist residue formation, and the vertical PAG and PDB concentration profile throughout the depth of the film determined by GCIB-TOF- SIMS for a model EUV resist system. The collected experimental data was used to feed a resist patterning simulation engine, in order to understand the additive effect of component distribution and efficiency on EUV stochastics and its potential impact on defect control. Our results unveiled a link between PDB quantum yield and nanoscopic material distribution uniformity. In parallel, a differentiating behavior was observed among inorganic underlayers: metal oxide hardmasks (HMs) invariably induced more resist residue than non-metallic HMs. Last, a specific example of joint PAG and PDB concentration depletion at the resist-substrate interface was related to a potential increase in microbridge defectivity as a result of poor stochastic counts.
引用
收藏
页数:15
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