AC Dielectrophoresis Alignment of ZnO Nanowires and Subsequent Use in Field-Effect Transistors

被引：8

作者：

Lee, Sang-Kwon ^{[1
]}

Lee, Seung-Yong ^{[1
]}

Hyung, Jung-Hwan ^{[1
]}

Jang, Chan-Oh ^{[1
]}

Kim, Dong-Joo ^{[1
]}

Suh, Duk-Il ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, SPRC, Jeonju 561756, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 07期

关键词：

Dielectrophoresis (DEP); Zinc Oxide (ZnO); Nanowires (NWs); Field-Effect Transistor (FET);

D O I：

10.1166/jnn.2008.402

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the dielectrophoresis (DEP) characterization of single crystalline zinc oxide (ZnO) nanowires with variations of the AC electric field and frequency. The alignment yield rate of ZnO nanowires in the gap over the 200 metal electrodes increased with increasing AC electric field and also changed by the applying frequency. Moreover, we demonstrated that the DEP prepared multi-ZnO nanowires field-effect transistors (FETs) exhibited excellent performance with a transconductance of similar to 3 mu S and a high drain current of similar to 2.7 x 10(-6) A (V-DS = 5 V, V-G = 20 V).

引用

页码：3473 / 3477

页数：5

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