Pressure-dependent EXAFS mean-square relative displacements of germanium and silicon crystals

被引：8

作者：

Ho Khac Hieu ^{[1
]}

Vu Van Hung ^{[2
]}

机构：

[1] Duy Tan Univ, Res & Dev Ctr Sci & Technol, Danang, Vietnam

[2] Viet Nam Educ Publishing House, Hanoi, Vietnam

来源：

HIGH PRESSURE RESEARCH | 2013年 / 33卷 / 04期

关键词：

pressure effects; mean-square relative displacement; Debye-Waller factor; EXAFS cumulants; thermodynamic quantities; statistical moment method; EQUATION-OF-STATE; THERMODYNAMIC PROPERTIES; UNIVERSAL EQUATION; TEMPERATURE; SI; PHASES; ORDER;

D O I：

10.1080/08957959.2013.849346

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, the statistical moment method (SMM) has been developed to study the pressure dependence of thermodynamic quantities of germanium and silicon crystals. We have derived the analytical expressions of the pressure-dependent parallel mean-square relative displacement (MSRD) or extended X-ray absorption fine structure (EXAFS) Debye-Waller factor, mean-square displacement (MSD) as well as lattice constant and volume change of diamond-type crystals. Numerical calculations performed for these semiconductors up to 11 GPa are found to be in good and reasonable agreement with available experimental data as well as with previous theoretical studies. Our results indicate that the SMM can be efficiently used for determining the relative change of the pressure-dependent MSRDs of germanium and silicon semiconductors. The research also shows the advantage of SMM on studying other thermodynamic properties of materials under high pressures.

引用

页码：768 / 776

页数：9

共 36 条

[1] Vibrational properties of Ge nanocrystals determined by EXAFS
Araujo, L. L.
Kluth, P.
Azevedo, G. de M.
Ridgway, M. C.
[J]. PHYSICAL REVIEW B, 2006, 74 (18)
[2] THERMAL AND STRUCTURAL DAMPING OF THE MULTIPLE-SCATTERING CONTRIBUTIONS TO THE X-RAY-ABSORPTION COEFFICIENT
BENFATTO, M
NATOLI, CR
FILIPPONI, A
[J]. PHYSICAL REVIEW B, 1989, 40 (14): : 9626 - 9635
[3] APPLICATION OF THE RATIO METHOD OF EXAFS ANALYSIS TO DISORDERED-SYSTEMS
BUNKER, G
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 207 (03): : 437 - 444
[4] Pressure-induced phase transitions in amorphous and metastable crystalline germanium by Raman scattering, x-ray spectroscopy, and ab initio calculations
Coppari, F.
Chervin, J. C.
Congeduti, A.
Lazzeri, M.
Polian, A.
Principi, E.
Di Cicco, A.
[J]. PHYSICAL REVIEW B, 2009, 80 (11):
[5] CROZIER ED, 1988, XRAY ABSORPTION PRIN, pCH9
[6] DALBA G, 1993, J NON-CRYST SOLIDS, V164, P159, DOI 10.1016/0022-3093(93)90516-Z
[7] High-pressure and high-temperature study of phase transitions in solid germanium
Di Cicco, A
Frasini, AC
Minicucci, M
Principi, E
Itiè, JP
Munsch, P
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (01): : 19 - 28
[8] SPHERICAL WAVE EXAFS ANALYSIS OF THE SILICON K-EDGE X-RAY ABSORPTION-SPECTRUM
DICICCO, A
BIANCONI, A
PAVEL, NV
[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (10) : 635 - 639
[9] EXPERIMENTAL-STUDY OF THE CRYSTAL STABILITY AND EQUATION OF STATE OF SI TO 248 GPA
DUCLOS, SJ
VOHRA, YK
RUOFF, AL
[J]. PHYSICAL REVIEW B, 1990, 41 (17) : 12021 - 12028
[10] High-pressure phases of amorphous and crystalline silicon
Durandurdu, M
Drabold, DA
[J]. PHYSICAL REVIEW B, 2003, 67 (21):

← 1 2 3 4 →