Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

被引：12

作者：

Antonova, IV ^{[1
]}

Popov, VP ^{[1
]}

Stas, VF ^{[1
]}

Gutakovskii, AK ^{[1
]}

Plotnikov, AE ^{[1
]}

Obodnikov, VI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00411-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An: increase in boron concentration in hydrogen implanted silicon leads to increase in blister concentration and decrease in defect concentration. Boron-related complexes are supposed to provide nucleation centers for microcavities formed during the ion implantation and following annealing due to effective boron interaction with different types of hydrogen-defect complexes. The high boron concentration in the initial crystal in the combination with high hydrogen concentration in as-bonding SOI leads to n-type of conductivity in the top layer of the SOI structure.

引用

页码：383 / 386

页数：4

共 6 条

[1] Application of hydrogen ion beams to Silicon On Insulator material technology [J].

Bruel, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 108 (03) :313-319

[2] INTER-BUBBLE FRACTURE MECHANISM OF BLISTER FORMATION ON HELIUM-IRRADIATED METALS [J].

EVANS, JH .

JOURNAL OF NUCLEAR MATERIALS, 1977, 68 (02) :129-140

[3]

HARA T, 1998, ELECTROCHEM SOC, V9723, P33

[4]

SCHERZER ABM, 1987, TOP APPL PHYS, V52, P271

[5] A "smarter-cut" approach to low temperature silicon layer transfer [J].

Tong, QY ;

Scholz, R ;

Gosele, U ;

Lee, TH ;

Huang, LJ ;

Chao, YL ;

Tan, TY .

APPLIED PHYSICS LETTERS, 1998, 72 (01) :49-51

[6] On the mechanism of the hydrogen-induced exfoliation of silicon [J].

Weldon, MK ;

Marsico, VE ;

Chabal, YJ ;

Agarwal, A ;

Eaglesham, DJ ;

Sapjeta, J ;

Brown, WL ;

Jacobson, DC ;

Caudano, Y ;

Christman, SB ;

Chaban, EE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04) :1065-1073

← 1 →