Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer

被引：12
|
作者：
Kang, J. [1 ]
Kurdoghlian, A. [1 ]
Margomenos, A. [1 ]
Moyer, H. P. [1 ]
Brown, D. [1 ]
McGuire, C. [1 ]
机构：
[1] HRL Lab LLC, Malibu, CA 90265 USA
来源：
ELECTRONICS LETTERS | 2014年 / 50卷 / 04期
关键词：
D O I：
10.1049/el.2013.4135
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ultra-wideband double-balanced resistive mixer with high dynamic range (IIP3) is reported. The mixer is designed and fabricated using HRL Laboratory's GaN high electron mobility transistor (HEMT) (T2) process and it utilises a series resistor-capacitor circuit network termination to the device gate, in order to achieve resonance-free broadband conversion loss and high dynamic range. The measured conversion loss from 3 to 40 GHz is between 5.5 and 8.5 dB at 1 GHz intermediate frequency. Large signal testing at 15 GHz showed a 1 dB gain compression point (P1dB) of 22 dBm. © The Institution of Engineering and Technology 2014.
引用
收藏
页码：295 / 296
页数：2
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