Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer

被引：12

作者：

Kang, J. ^{[1
]}

Kurdoghlian, A. ^{[1
]}

Margomenos, A. ^{[1
]}

Moyer, H. P. ^{[1
]}

Brown, D. ^{[1
]}

McGuire, C. ^{[1
]}

机构：

[1] HRL Lab LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 04期

关键词：

D O I：

10.1049/el.2013.4135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-wideband double-balanced resistive mixer with high dynamic range (IIP3) is reported. The mixer is designed and fabricated using HRL Laboratory's GaN high electron mobility transistor (HEMT) (T2) process and it utilises a series resistor-capacitor circuit network termination to the device gate, in order to achieve resonance-free broadband conversion loss and high dynamic range. The measured conversion loss from 3 to 40 GHz is between 5.5 and 8.5 dB at 1 GHz intermediate frequency. Large signal testing at 15 GHz showed a 1 dB gain compression point (P1dB) of 22 dBm. © The Institution of Engineering and Technology 2014.

引用

页码：295 / 296

页数：2