Synthesis and in situ high pressure Raman spectroscopy study of AlN dendritic crystal

被引:8
作者
Li, Xuefei [1 ,2 ]
Kong, Lingnan [1 ,2 ]
Shen, Longhai [3 ]
Yang, Jinghai [1 ,2 ]
Gao, Ming [1 ,2 ]
Hu, Tingjing [1 ,2 ]
Wu, Xingtong [1 ,2 ]
Li, Ming [1 ,2 ]
机构
[1] Jilin Normal Univ, Inst Condensed State Phys, Siping, Peoples R China
[2] Jilin Normal Univ, Minist Educ, Key Lab Funct Mat Phys & Chem, Siping 136000, Jilin, Peoples R China
[3] Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China
基金
美国国家科学基金会;
关键词
Nitrides; High pressure; Raman spectroscopy; Phase transition; ALUMINUM NITRIDE; DIELECTRIC-PROPERTIES; BULK ALN; SCATTERING; DEPENDENCE; REDUCTION; GAN;
D O I
10.1016/j.materresbull.2013.05.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlN dendritic crystal was synthesized by the direct current arc discharge apparatus. X-ray diffraction (XRD) patterns indicated that the sample is hexagonal AlN and preferentially grown along the a-axis direction. Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) images reveal that the product mainly consists of micron AlN dendritic crystal. In situ high pressure Raman spectra of AlN dendritic crystal has been measured in the pressure ranged from ambient pressure to 32.97 GPa at room temperature by using diamond anvil cell. According to the Raman scattering results, the phase transition from the wurtzite to rock salt was found at about 20.73 GPa by the appearance of a new Raman signal. Above 20.73 GPa, a new Raman signal due to disorder-activated Raman scattering in the rock salt phase was observed. In addition, the pressure coefficients, phase transition criterion, and mode Gruneisen parameters of AlN dendritic crystal, which could be different from that of other AlN, are carefully discussed. (c) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3310 / 3314
页数:5
相关论文
共 27 条
[1]   Spatially resolved electron energy loss spectroscopy on n-type ultrananocrystalline diamond films [J].
Arenal, R. ;
Stephan, O. ;
Bruno, P. ;
Gruen, D. M. .
APPLIED PHYSICS LETTERS, 2009, 94 (11)
[2]   High-pressure phases of group IV and III-V semiconductors [J].
Auckland, GJ .
REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (04) :483-516
[3]   Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].
Davydov, VY ;
Kitaev, YE ;
Goncharuk, IN ;
Smirnov, AN ;
Graul, J ;
Semchinova, O ;
Uffmann, D ;
Smirnov, MB ;
Mirgorodsky, AP ;
Evarestov, RA .
PHYSICAL REVIEW B, 1998, 58 (19) :12899-12907
[4]  
Haboeck U, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1710, DOI 10.1002/pssc.200303130
[5]   Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN [J].
Halsall, MP ;
Harmer, P ;
Parbrook, PJ ;
Henley, SJ .
PHYSICAL REVIEW B, 2004, 69 (23) :235207-1
[6]   Effects of nano-AlN and sintering atmosphere on microstructure and properties of vitrified bond [J].
Hou, Yong-gai ;
Qiao, Gui-ying ;
Shang, Yong ;
Zou, Wen-jun ;
Xiao, Fu-ren ;
Liao, Bo .
COMPOSITES PART B-ENGINEERING, 2011, 42 (04) :756-762
[7]   High pressure Raman scattering of silicon nanowires [J].
Khachadorian, Sevak ;
Papagelis, Konstantinos ;
Scheel, Harald ;
Colli, Alan ;
Ferrari, Andrea C. ;
Thomsen, Christian .
NANOTECHNOLOGY, 2011, 22 (19)
[8]   Effects of carbothermal reduction on the thermal and electrical conductivities of aluminum nitride ceramics [J].
Kim, Hui-sik ;
Chae, Jung-min ;
Oh, Yoon-suk ;
Kim, Hyung-tae ;
Shim, Kwang-bo ;
Lee, Sung-min .
CERAMICS INTERNATIONAL, 2010, 36 (07) :2039-2045
[9]   Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes [J].
Kuball, M ;
Hayes, JM ;
Shi, Y ;
Edgar, JH ;
Prins, AD ;
van Uden, NWA ;
Dunstan, DJ .
JOURNAL OF CRYSTAL GROWTH, 2001, 231 (03) :391-396
[10]   Raman scattering studies on single-crystalline bulk AlN under high pressures [J].
Kuball, M ;
Hayes, JM ;
Prins, AD ;
van Uden, NWA ;
Dunstan, DJ ;
Shi, Y ;
Edgar, JH .
APPLIED PHYSICS LETTERS, 2001, 78 (06) :724-726