Broadband Doherty-Outphasing RF Power Amplifier for S-Band

被引：0
作者：
Chen, Yi [1 ]
Cheng, Zhiqun [1 ]
Zhu, Yichao [1 ]
Liu, Guohua [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou, Peoples R China
来源：
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年
基金：
中国国家自然科学基金;
关键词：
Outphasing; Power Amplifier; Low-pass Matching Network; Doherty; Broadband; High Efficiency;
D O I：
10.1109/isne.2019.8896381
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper introduces a broadband S-band outphasing power amplifier. The low-pass matching network is applied for both the post-matching structure of Doherty power amplifier(PA) and the phase compensation of combiner to achieve high drain efficiency at saturation and power back-off in a wide frequency range. The design was simulated using Cree's GaN HEMT CGH40010F transistor. The results of the proposed outphasing PA shows that the drain efficiency is higher than 63% within a 46.5dBm saturated output power and the 6dB power back-off drain efficiency is 45%-50% in 3.0-3.8 GHz.
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收藏
页数：3
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