Growth Optimization of Sr2CoO4 Thin Films By Pulsed Laser Deposition Technique

被引：1

作者：

Pandey, Pankaj K. ^{[1
]}

Phase, D. M. ^{[1
]}

Choudhary, R. J. ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷

关键词：

Pulsed laser deposition; X-ray photoemission spectroscopy;

D O I：

10.1063/1.4710201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In our work, we optimized the growth conditions for the single phase growth of Sr2CoO4 (SCO) thin films on single crystalline (001)LaAlO3 (LAO) substrates using the non-equilibrium process of pulsed laser deposition (PLD). We varied substrate temperature (Ts) from 720 degrees C to 840 degrees C and also studied the effect of oxygen partial pressure (OPP) and laser repetition rate (f) on the structural evolution of the grown films. It turns out that OPP of 300 mTorr, laser repetition rate of 4Hz and substrate temperature (Ts) at 800 degrees C helps in good crystalline and less resistive phase growth of SCO film on LAO substrate. We also determined valence state of Co in Sr2CoO4.

引用

页码：711 / 712

页数：2

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