High quality SiC applications in radiation dosimetry

被引：25

作者：

Bruzzi, M

Nava, F

Pini, S

Russo, S

机构：

[1] INFN Firenze, I-50139 Florence, Italy

[2] Dipartimento Energet, I-50139 Florence, Italy

[3] Dept Fis Modena, Bologna, Italy

[4] INFN, Bologna, Italy

[5] INFN, Firenze & Azienda Osped Careggi, Florence, Italy

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

silicon carbide; epitaxial; irradiation; on-line dosimeters;

D O I：

10.1016/S0169-4332(01)00528-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current response of SiC on-line dosimeters to gamma -radiation from a Co-60 source is presented. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n(+)-type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000 Angstrom gold film on the epitaxial layer using a lift-off technology and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and exposed to the Co-60 source in the dose range 0.1-1 Gy. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge has been observed to increase linearly with the dose and dose-rate. (C) 2001 Published by Elsevier Science B.V.

引用

页码：425 / 430

页数：6

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