Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction

被引：0

作者：

Senda, Takeshi ^{[1
,2
]}

Izunome, Koji ^{[1
]}

Tsusaka, Yoshiyuki ^{[2
]}

Fukuda, Kazunori ^{[2
]}

Hayashi, Kazuki ^{[2
]}

Abe, Maiko ^{[2
]}

Takahata, Sayuri ^{[2
]}

Takano, Hidekazu ^{[2
]}

Kagoshima, Yasushi ^{[2
]}

Matsui, Junji ^{[2
]}

机构：

[1] Covalent Mat Corp, Niigata 9570197, Japan

[2] Univ Hyogo, Grad Sch Mat Sci, Kamigori, Hyogo 6781297, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

strained silicon; compositionally graded SiGe; lattice tilt; lattice rotation; X-ray diffraction; synchrotron X-ray microbeam; threading dislocation; misfit dislocation; cross section;

D O I：

10.1143/JJAP.47.6241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the crystallinity of compositionally graded SiGe layers of strained Si (s-Si) wafers in the growth direction by irradiating, a synchrotron X-ray microbeam with a high parallelism on a cross section of s-Si wafers. As a result. we can confirm the presence Of Surface parallel SiGe lattice rotation and lattice rotation distribution (LRD). The Surface parallel LRD and relaxation ratio of SiGe start to decrease in the depth direction below approximately 3 put from the wafer surface. It is inferred that the insufficient relaxation of SiGe near the Wafer Surface is caused by the characteristics of the free wafer surface. Furthermore. such characteristics are thought to lead to a reduction in LRD near the wafer Surface.

引用

页码：6241 / 6246

页数：6

共 12 条

[1] Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing [J].

Currie, MT ;

Samavedam, SB ;

Langdo, TA ;

Leitz, CW ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1718-1720

[2] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].

FITZGERALD, EA ;

XIE, YH ;

GREEN, ML ;

BRASEN, D ;

KORTAN, AR ;

MICHEL, J ;

MII, YJ ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :811-813

[3] Two-dimensional anisotropic lattice deformation observed in a commercially available strained-Si wafer [J].

Fukuda, Kazunori ;

Tomita, Naohiro ;

Hayashi, Kazuki ;

Tsusaka, Yoshiyuki ;

Kagoshima, Yasushi ;

Matsui, Junji ;

Ogura, Atsushi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11) :8542-8548

[4] Impact of strained-Si channel on complementary metal oxide semiconductor circuit performance under the sub-100 nm regime [J].

Hatakeyama, T ;

Matsuzawa, K ;

Takagi, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2627-2632

[5] Dislocation glide and blocking kinetics in compositionally graded SiGe/Si [J].

Leitz, CW ;

Currie, MT ;

Kim, AY ;

Lai, J ;

Robbins, E ;

Fitzgerald, EA ;

Bulsara, MT .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2730-2736

[6] Strain relaxation and misfit dislocations in compositionally graded Si1-xGex layers on Si(001) [J].

Li, JH ;

Holy, V ;

Bauer, G ;

Hohnisch, M ;

Herzog, HJ ;

Schaffler, F .

JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :137-141

[7] NUCLEATION OF DISLOCATIONS IN SIGE LAYERS GROWN ON (001)SI [J].

MOONEY, PM ;

LEGOUES, FK ;

TERSOFF, J ;

CHU, JO .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) :3968-3977

[8] Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures [J].

Samavedam, SB ;

Fitzgerald, EA .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3108-3116

[9] Crystallinity estimation of thin silicon-on-insulator layers by means of diffractometry using a highly parallel X-ray microbeam [J].

Takeda, Shingo ;

Yokoyama, Kazushi ;

Tsusaka, Yoshiyuki ;

Kagoshima, Yasushi ;

Matsui, Junji ;

Ogura, Atsushi .

JOURNAL OF SYNCHROTRON RADIATION, 2006, 13 (05) :373-377

[10] DISLOCATIONS AND STRAIN RELIEF IN COMPOSITIONALLY GRADED LAYERS [J].

TERSOFF, J .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :693-695

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