Magnetic phase transition and large room temperature magnetoresistance in Ni doped FeRh films

被引：9

作者：

Chen, Jia-hui ^{[1
]}

Ma, Jing ^{[1
]}

Zhang, Yu-jun ^{[1
]}

Wu, Liang ^{[1
]}

Nan, C. W. ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 741卷

基金：

中国国家自然科学基金;

关键词：

FeRh; Magnetic transition; Doping; Magnetoresistance; Room temperature; THIN-FILMS; ALLOYS; FIELD;

D O I：

10.1016/j.jallcom.2018.01.186

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the structural, magnetic and electrical transport properties of the Ni doped FeRh films prepared by magnetron co-sputtering. A large magetoresistance of 35%, induced by a reversible antiferromagnetic to ferromagnetic phase transition, is obtained at room temperature with only 1 mol.% Ni addition. Magnetic field is revealed to have an equivalent effect as temperature to drive the magnetic phase transition. Moreover, the way to realize a nonvolatile room temperature magetoresistance effect is also discussed. These results give FeRh the possibility of technological application in the spintronic field at room temperature, which are referential to other material systems with a first-order magnetic phase transition. (c) 2018 Elsevier B.V. All rights reserved.

引用

页码：557 / 561

页数：5

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