A 16-Gb/s differential I/O cell with 380fs RJ in an emulated 40nm DRAM process

被引:9
作者
Nguyen, Nhat [1 ]
Frans, Yohan [1 ]
Leibowitz, Brian [1 ]
Li, Simon [1 ]
Navid, Reza [1 ]
Aleksic, Marko [1 ]
Lee, Fred [1 ]
Quan, Fredy [1 ]
Zerbe, Jared [1 ]
Perego, Rich [1 ]
Assaderaghi, Fari [1 ]
机构
[1] Rambus Inc, Los Altos, CA 94022 USA
来源
2008 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2008年
关键词
D O I
10.1109/VLSIC.2008.4585979
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a 16-Gb/s differential bidirectional I/O transceiver cell in an emulated 40nm DRAM process that has a fan-out of four-inverter delay (FO4) of 45ps, resulting in a bit time that is only 1.4 FO4 delays long. The transceiver implements several techniques to achieve low jitter despite the slow process and constrained power consumption, including a quad rate clocking with closed-loop quadrature correction, a shared LC-PLL with an octagonal inductor in a three-metal process, and a data-dependent regulator. The transceiver has measured random jitter of 380fs rms at the transmitter output and BER < 10(-14) while consuming 8mW/Gb/s.
引用
收藏
页码:128 / 129
页数:2
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